MOSFET – 900V FQA11N90C-F109
MOSFET – 900V ON Semiconductor FQA11N90C-F109
For use with our VariWattage (20-80W) and VPC-1 kits, other power scaling applications, or as a general purpose N-channel Enhancement MOSFET. With proper heat sinking (heat paste, metal chassis or heatsink mounted) 11A, 300W maximum power rating at + 150 C.
Manufacturer: ON Semiconductor
Product Category: MOSFET
RoHS: Yes
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-3PN-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 900 V
Id – Continuous Drain Current: 11 A
Rds On – Drain-Source Resistance: 1.4 Ohms
Vgs – Gate-Source Voltage: 30 V
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 300 W
Configuration: Single
Channel Mode: Enhancement
Product Category: MOSFET
RoHS: Yes
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-3PN-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 900 V
Id – Continuous Drain Current: 11 A
Rds On – Drain-Source Resistance: 1.4 Ohms
Vgs – Gate-Source Voltage: 30 V
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 300 W
Configuration: Single
Channel Mode: Enhancement
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